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Nitrogen-Doped Zinc Oxide for Photo-Driven Molecular Hydrogen Production.

光駆動型水素生成のための窒素ドープ酸化亜鉛光触媒の開発

other not specified not assessed

Abstract

Zinc oxide (ZnO) is a widely investigated semiconductor for photocatalysis owing to its thermal stability, high exciton binding energy, and electron mobility, yet its broad bandgap restricts photoactivity to the UV range. This study introduced nitrogen dopants into the ZnO lattice via a green synthetic route to create localized defect states within the bandgap, thereby extending optical response into the visible spectrum and lowering the energy threshold for photoinduced charge separation. Systematic variation of thermal treatment temperature during synthesis revealed that the processing conditions govern the microscopic nature of the resulting defects and, consequently, whether the material favors oxidative or reductive chemistry. Materials prepared at lower temperatures exhibited superior efficiency in photocatalytic water splitting for molecular hydrogen production. These findings advance the development of N-doped ZnO as a candidate photocatalyst for artificial photosynthesis applications.

Mechanism

Nitrogen doping introduces localized defect states within the ZnO bandgap, enabling visible-light-driven charge separation and subsequent photocatalytic water splitting to yield molecular hydrogen.

Bibliographic

Authors
Cerrato E, Privitera A, Chiesa M, Salvadori E, Paganini MC
Journal
Int J Mol Sci
Year
2022 (2022-05-07)
PMID
35563612
DOI
10.3390/ijms23095222
PMC
PMC9100422

Tags

Mechanism:活性酸素種

Delivery context

The delivery route is not clearly identifiable from this paper. For hydrogen intake, inhalation is the most efficient route; inhalation, however, carries explosion risk (empirical LFL of 10%; high-concentration devices are not recommended).

Safety notes

The delivery route is not clearly identifiable from this paper. For hydrogen intake, inhalation is the most efficient route; inhalation, however, carries explosion risk (empirical LFL of 10%; high-concentration devices are not recommended).

See also:

Cite as: H2 Papers — PMID 35563612. https://h2-papers.org/en/papers/35563612
Source: PubMed PMID 35563612